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Influence of the Carrier Concentration of Indium Phosphide on the Porous Layer Formation

Author(s): Ya.A. Suchikova | V.V. Kidalov | G.A. Sukach

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 2;
Issue: 4;
Date: 2010;
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Keywords: Porous Inp | Scanning Electron Microscopy | Electrochemical Etching | Nanostructure | Segregation

This paper presents experimental results demonstrating the influence of the doping level of InP on the porous layer formation on its surface during the electrochemical etching. It is established that the more high-quality porous layers are formed using the crystals with the free carrier concentration of 2,3 × 1018 cm–3. The observation results of InP layered heterogeneity are discussed and explained in terms of the features of the growing process of heavily doped crystals.
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