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The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon

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Author(s): Kulinich O. A. | Smyntyna V. A., | Glauberman M. A. | Chemeresyuk G. G. | Yatsunskiy I. R.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 5;
Start page: 62;
Date: 2008;
Original page

Keywords: silicon | oxide | defects

ABSTRACT
The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters. It is shown the influence of initial defects on mechanical stress and deformation distribution in oxidized silicon.
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