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Influence of Magnetic Field on Electric Charge Transport in Holomiun Thin Films at Low Temperatures

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Author(s): Jan Dudas | Stanislav Gabani | Viktor Kavecansky | Andrej Vincze

Journal: Advances in Electrical and Electronic Engineering
ISSN 1336-1376

Volume: 4;
Issue: 2;
Start page: 83;
Date: 2005;
Original page

Keywords: Temperature | electrical resistance | thin films | structure.

ABSTRACT
Holmium thin films were prepared by evaporation in ultrahigh vacuum (UHV) and high precision electrical resistance measurements were performed on them as well as on holomium bulk sample in the wide temperature range from 4,2 K up to the room temperature. Electric charge transport is profoundly influenced by the magnetic structure at low temperatures and a "knee-like" resistance anomaly was observed near the transportation from paramagnetic state to basal-plane spiral structure in bulk with the Neel temperature TN=128,9 K and below ~ 122 K in thin Ho films in a thickness range from 98 nm to 215 nm. Unexpected resistance minimum at ~ 9 K and a slope´s charge of the R vs. T curve near ~ 170 K was observed in 215 nm thin film. Application of magnetic field parallel to the substrate and thin film plane for temperatures below ~ 150 K caused the decrease of resistence value with increasing magnetic flux density. Increasing suppression of the TN value up to ~ 5 K with increasing flux density value up to 5 T was observed in Ho films. 
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