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Influence of Magnetic Field on Electric Charge Trasport in Holmium Thin Film at Low Temperature

Author(s): Jan Dudas | Stanislav Gabani | Jozef Bagi | Iwona Goscianska | Anna Hodulikova

Journal: Advances in Electrical and Electronic Engineering
ISSN 1336-1376

Volume: 8;
Issue: 1;
Start page: 29;
Date: 2010;
Original page

Keywords: Holmium thin films | electrical resistance | low temperatures | Néel temperature | X- ray diffraction.

High precision electrical resistance measurements were performed in the low  temperature range from 4.2 K up to room temperature on a holmium bulk sample, and on holmium thin films in magnetic field. The X-ray diffraction of Ho films confirmed  their preferential crystal orientation and revealed diffraction peaks originating from the hcp structure of Ho and those from inessential holmium dihydrid content. The TN value of these films decreased with decreasing film thickness. Magnetic field applied parallel to the thin film plane caused an increasing suppression of the TN value up to 5 K  with increasing flux density value up to 5 T.

Tango Jona
Tangokurs Rapperswil-Jona

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