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Influence of N Dopant on the Electric and Magnetic Properties of Co Doped ZnO Thin Films

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Author(s): WANG Xue-Tao, ZHU Li-Ping, YE Zhi-Gao, YE Zhi-Zhen, ZHAO Bing-Hui

Journal: Journal of Inorganic Materials
ISSN 1000-324X

Volume: 25;
Issue: 7;
Start page: 711;
Original page

Keywords: PLD; Co-N co-doping; ZnO thin films; magnetism

ABSTRACT
Co-N co-doped ZnO thin films were fabricated on quartz and Si(100) substrates using a technique of electron cyclotron resonance (ECR) N2O plasma-enhanced pulsed laser deposition and studied the influence of N dopant on the electric and magnetic properties of Co doped ZnO thin films. The thin films deposited at 700℃ and N2O pressure of 15Pa had magnetism at room temperature. The samples were tested by XRD, SEM, XPS, Hall testing and superconducting quantum interference device (SQUID) magnetometry. The results indicate that the configuration of the thin films is a completely c-axis orientation without any Co or N related phases. Co atoms and N atoms substitute Zn and O sites respectively in the form of CoZn and NO in the thin films. Hall testing and SQUID results indicate that Co-N co-doped thin films are p type with lower carrier concentration and higher magnetization than those of the Co doped ZnO thin films. The N dopant changes the conduction type and gives rise to the increasing of magnetization of Co doped ZnO thin films.

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Tangokurs Rapperswil-Jona

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