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Influences of Bi2O3-B2O3 Glass Doping on Properties of ZnO-Bi2O3-TiO2-based Varistors

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Author(s): WAN Shuai, LV Wen-Zhong

Journal: Journal of Inorganic Materials
ISSN 1000-324X

Volume: 25;
Issue: 8;
Start page: 811;
Date: 2010;
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Keywords: ZnO-B2O3 glass; Bi2O3-B2O3 glass; varistor; electrical properties; kinetic of grain growth

ABSTRACT
The influences of Bi2O3-B2O3 glass additives on the microstructure and nonlinear electrical properties of ZnO-Bi2O3-TiO2-based varistor were investigated. SEM images show that low melting Bi2O3-B2O3 glass can help to increase ZnO grain size and refine microstructure with uniform grain size distribution at 900¡䟴hrough liquid phase sintering mechanism, whereas the grain size decreases with increasing ZnO-B2O3 glass addition resulting from non-melting ZnO-B2O3 glass pining the ZnO grain boundaries. The varistor ceramics with 2wt% Bi2O3-B2O3 glass addition own best nonlinear electrical properties with voltage gradient E1mA=124.9V/mm, nonlinear coefficient α=46.2, leakage current density JL=0.2μA/cm2. For Bi2O3-B2O3 glass doped varistor, kinetic exponent nB and apparent activation energy QB are only 2.15 and 146.2kJ/mol which are much lower than that of ZnO-B2O3 glass doped varistor. The results reveal that Bi2O3-B2O3 glass doping is more effective in improving the microstructure and electrical properties of ZnO-Bi2O3-TiO2-based varistor than ZnO-B2O3 glass doping.

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