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Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

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Author(s): Wipakorn Jevasuwan | Yuji Urabe | Tatsuro Maeda | Noriyuki Miyata | Tetsuji Yasuda | Hisashi Yamada | Masahiko Hata | Noriyuki Taoka | Mitsuru Takenaka | Shinichi Takagi

Journal: Materials
ISSN 1996-1944

Volume: 5;
Issue: 3;
Start page: 404;
Date: 2012;
Original page

Keywords: InGaAs | Al2O3 | ALD | MISFET | trimethylaluminum

ABSTRACT
Interface-formation processes in atomic layer deposition (ALD) of Al2O3 on InGaAs surfaces were investigated using on-line Auger electron spectroscopy. Al2O3 ALD was carried out by repeating a cycle of Al(CH3)3 (trimethylaluminum, TMA) adsorption and oxidation by H2O. The first two ALD cycles increased the Al KLL signal, whereas they did not increase the O KLL signal. Al2O3 bulk-film growth started from the third cycle. These observations indicated that the Al2O3/InGaAs interface was formed by reduction of the surface oxides with TMA. In order to investigate the effect of surface-oxide reduction on metal-insulator-semiconductor (MIS) properties, capacitors and field-effect transistors (FETs) were fabricated by changing the TMA dosage during the interface formation stage. The frequency dispersion of the capacitance-voltage characteristics was reduced by employing a high TMA dosage. The high TMA dosage, however, induced fixed negative charges at the MIS interface and degraded channel mobility.

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