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Integrated double-sided silicon microstrip detectors

Author(s): Perevertailo V. L.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 5;
Start page: 17;
Date: 2011;
Original page

Keywords: technology of р+- | n+-side of the detector | integrated polysilicon resistors | capacitors with double layer dielectric | radiation resistance | coefficient of dose dependence

The problems of design, technology and manufacturing double-sided silicon microstrip detectors using standard equipment production line in mass production of silicon integrated circuits are considered. The design of prototype high-energy particles detector for experiment ALICE (CERN) is presented. The parameters of fabricated detectors are comparable with those of similar foreign detectors, but they are distinguished by lesser cost.
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