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Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature

Author(s): I. S. Yu | T. H. Wu | K. Y. Wu | H. H. Cheng | V. I. Mashanov | A. I. Nikiforov | O. P. Pchelyakov | X. S. Wu

Journal: AIP Advances
ISSN 2158-3226

Volume: 1;
Issue: 4;
Start page: 042118;
Date: 2011;
Original page

We report on experimental investigations of the growth of Ge1-xSnx film with thickness above the critical thickness using Molecular Beam Epitaxy. A series of Ge1-xSnx films with various Sn compositions up to 14% are deposited on a Ge buffer layer for growth at low temperatures close to the melting point of Sn. Analysis of various measurements shows that the Ge1-xSnx film is defect free in the XTEM image and that Sn is distributed almost uniformly in the film for Sn compositions up to 9.3%. The Sn composition of the films is higher than the Sn composition that is theoretically predicted to cause the energy band of Ge to change from an indirect to a direct bandgap; thus, the present investigation provides a method for growing direct bandgap GeSn film, which is desired for use in applications involving optoelectronic devices.
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