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Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth

Author(s): Helfrich Mathieu | Gröger Roland | Förste Alexander | Litvinov Dimitri | Gerthsen Dagmar | Schimmel Thomas | Schaadt Daniel

Journal: Nanoscale Research Letters
ISSN 1931-7573

Volume: 6;
Issue: 1;
Start page: 211;
Date: 2011;
Original page

Abstract In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning steps were analyzed and optimized. A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination.
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