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Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence

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Author(s): Khoverko Yu. N.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 5-6;
Start page: 63;
Date: 2010;
Original page

Keywords: polysilicon | SOI structure | laser recrystallization | sensor | electronic irradiation | magnetoresistance

ABSTRACT
The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2—300 К and high magnetic fields were investigated. It was found that heavily doped laser recrystallized polysilicon on insulator layers show its radiation resistance under irradiation with high-energy electrons and magnetoresistance of such material remains quite low in magnetic field about 14 T does not exceed 1—2%. Such qulity can be applied in designing of microelectronic sensors of mechanical values operable in hard conditions of exploitation.
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