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Investigation of strained InGaAs layers on GaAs substrate

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Author(s): Agata Jasik | Jerzy Sass | Krystyna Mazur | Marek Wesolowski

Journal: Optica Applicata
ISSN 0078-5466

Volume: 37;
Issue: 3;
Start page: 237;
Date: 2007;
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Keywords: low pressure metalorganic vapour phase epitaxy (LP MOVPE) | strained InGaAs layer | critical layer thickness | high resolution X-ray diffractometry (HR XRD) | diffuse scattering | atomic force microscopy (AFM) | misfit dislocation | plastic relaxation

ABSTRACT
A set of In0.13Ga0.87As layers of various thicknesses on GaAs substrate has been grown by low pressure metalorganic vapour phase epitaxy (LP MOVPE). The initial stage of relaxation process has been investigated and critical layer thickness (CLT) has been determined. The investigations were performed by applying atomic force microscopy (AFM), high resolution X-ray diffractometry (HR XRD) with conventional and synchrotron radiation. The value of CLT determined by AFM observations agrees with that obtained from diffuse scattering measurements. The value is in agreement with HR XRD results.

Tango Jona
Tangokurs Rapperswil-Jona

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