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Layers of Metal Nanoparticles on Semiconductors Deposited by Electrophoresis from Solutions with Reverse Micelles

Author(s): Zdansky K | Kacerovsky P | Zavadil J | Lorincik J | Fojtik A

Journal: Nanoscale Research Letters
ISSN 1931-7573

Volume: 2;
Issue: 9;
Start page: 450;
Date: 2007;
Original page

Keywords: Nanoparticles | Electrophoresis | Schottky barrier | InP

AbstractPd nanoparticles were prepared with reverse micelles of water/AOT/isooctane solution and deposited onto silicon or InP substrates by electrophoresis. A large change of capacitance-voltage characteristics of mercury contacts on a semiconductor was found after Pd deposition. This change could be modified when the Pd deposition is followed by a partial removal of the deposited AOT. The deposited Pd nanoparticles were investigated by optical mictroscopy, SIMS and SEM. Finally, Schottky diodes with barrier height as high as 1.07 eV were prepared by deposition of Pd nanoparticles on n-type InP and by a partial removal of superfluous AOT. These diodes are prospective structures for further testing as hydrogen sensors.

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Tango Rapperswil

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