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Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors

Author(s): Amato M. A.

Journal: Revista Brasileira de Ensino de FĂ­sica
ISSN 0102-4744

Volume: 24;
Issue: 4;
Start page: 379;
Date: 2002;
Original page

It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure.
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