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Magnetoresistive Properties of Spin-Valve Structures Based on Co and Cu or Au

Author(s): M.H. Demydenko | S.I. Protsenko | D.M. Kostyuk | I.V. Cheshko

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 3;
Issue: 4;
Date: 2011;
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Keywords: Spin-Valve | MR | Induction of magnetic field | Coercitivity.

The construction of module for automation measurement of magnetoresistance (MR) and coercitivity force (Вс) in spin-valve structures based on Co and Cu or Au film systems was proposed. The peculiarities of dependences of MR and Bc from angle α between substrate plane and direction of external magnetic field induction were studied. The abrupt changes of MR and Вс in the range α = 70° − 90° were determined. The dependence character of MR from α describes as a level of solution of atoms of bottom ferromagnetic layer Co(3 nm) or Co(20 nm) in layer Cu(6 nm) as long as atoms Co(3 nm) have a practically full solution but Co(20 nm) – only limited solution. In this case magnetization of magnet layers of Co(20) and solid solution (s. s.) [Cu, Co(3 nm)] and layers of [Co(20 nm-x)] + s.s.[Cu, Co(x)] realize in different ways. This fact is cause of increase or decrease of MR.
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