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Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

Author(s): Viranjay M. Srivastava | K. S. Yadav | G. Singh

Journal: International Journal of Communications, Network and System Sciences
ISSN 1913-3715

Volume: 04;
Issue: 09;
Start page: 590;
Date: 2011;
Original page

Keywords: Capacitance-Frequency Curve | Capacitance-Voltage Curve | DP4T Switch | LCR Meter | MOS Device | Radio Frequency | RF Switch | Testing | VEE Pro | VLSI

To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 Å which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.

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