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The mechanism of formation of the interlayer quantum wires in zinc-doped Bi2Te3

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Author(s): Alieva A. P. | Aleskerov F. K. | Kakhramanov S. Sh. | Nasibova S. A. | Moroidor E. D. | Pishkin M.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 3;
Start page: 46;
Date: 2012;
Original page

Keywords: quantum dots | nanowires | migration of atoms | morphology | topological insulators | clusters | diffusion | aggregation

ABSTRACT
Nanowires formation process on a (0001) surface of Bi2Te3 is studied. It has been established that on interlayer surface Te(1)—Te(1) there is a process of migration of atoms, moving and coagulation of clusters on the basis of Zn atoms. As a result of diffusion-limited aggregation the structures with quantum dots are formed, from which nanowires are self-organized. Such superficial structures play regulating role in working out the topological insulators based on A2VB3VI and increase thermoelectric efficiency of a composite.
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