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Metal-assisted chemical etching using sputtered gold: a simple route to black silicon

Author(s): Agnieszka Kurek and Sean T Barry

Journal: Science and Technology of Advanced Materials
ISSN 1468-6996

Volume: 12;
Issue: 4;
Start page: 045001;
Date: 2011;
Original page

We report an accessible and simple method of producing 'black silicon' with aspect ratios as high as 8 using common laboratory equipment. Gold was sputtered to a thickness of 8 nm using a low-vacuum sputter coater. The structures were etched into silicon substrates using an aqueous H2O2/HF solution, and the gold was then removed using aqua regia. Ultrasonication was necessary to produce columnar structures, and an etch time of 24 min gave a velvety, non-reflective surface. The surface features after 24 min etching were uniformly microstructured over an area of square centimetres.
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