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Migration of Impurities in the Structure of Graphene

Author(s): A.S. Dolgov | Ju.L. Zhabchyk

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 4;
Issue: 3;
Start page: 03021-1;
Date: 2012;
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Keywords: Graphene | Impurities | Migration | Generating function | Distribution of atom

The laws of single-particle migration of atoms in the one-layer hexagonal structure are considered. It is accepted that impurity atom contacts with one of structure cell and can execute the single-order jumps. The exact solution of the infinite collection of microscopic equation of migration is written in the technique of the generating function and appropriate macroscopic characteristics are found. It is determined that the general pattern of transfer quality coincides with the law of particle diffuse propagation and rate of process propagation in the graphene structure exceeds the analogous value for the comparable two-dimensional square array. The method for finding the exact solution of migration problem in the limited medium is formulated on the basis of results for infinite medium. The migration pattern in the frontier area of the graphene sheet and in the structure which is shaping the carbon nanotubes is defined. The probable variations of the observed characteristics which are connected with the impurity availability which is the corollary of migration are discussed.
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