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Modeling of Si-QD Solar Cell in MATLAB

Author(s): S.S. Bohra | A.K. Panchal

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 5;
Issue: 2;
Start page: 02006-1;
Date: 2013;
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Keywords: Quantum Dot | Si-QD | Barrier layer | Quantum Confinement Effect (QCE) | Photo-curren

In this paper, the modeling and analysis of single bi-layer Si-QD solar cell is addressed. The modeling of solar cell is done in MATLAB. The photo currents are calculated for various Si-QD diameters like 2.5, 3, 3.5 and 4 nm and SiO2 barrier layer thicknesses like 2.5, 2 and 1.5 nm. It has been observed that with the Si-QD diameter, the photo-current increases. On the other hand, photo-current varies conversely with barrier layer thickness due low carrier tunneling probability through barrier.
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