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Modification of energy bandgap in lattice mismatched InGaAs/GaAs heterostructures

Author(s): Lukasz Gelczuk | Maria Dabrowska-Szata

Journal: Optica Applicata
ISSN 0078-5466

Volume: 39;
Issue: 4;
Start page: 845;
Date: 2009;
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Keywords: bandgap energy | lattice mismatch | deep level defects | InGaAs heterostructures | deep level transient spectroscopy (DLTS)

This paper addresses some physical aspects and presents experimental results concerning to phenomena which evoke modification of band structure in lattice mismatched InGaAs/GaAs heterostructures, namely the introduction of extra deep-lying energy levels in the bandgap.  The deep level transient spectroscopy reveals commonly observed deep level defects in GaAs-based structures associated with native point defects as well as misfit dislocations related to strain relaxation processes.
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