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A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration

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Author(s): Zang KeYan | Cheong DavyWC | Liu HongFei | Liu Hong | Teng JingHua | Chua SooJin

Journal: Nanoscale Research Letters
ISSN 1931-7573

Volume: 5;
Issue: 6;
Start page: 1051;
Date: 2010;
Original page

Keywords: Nanorod | Lift off | III-nitride semiconductor

ABSTRACT
Abstract The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, III–V power devices and optical devices. We have developed a simple wet chemical etching method to release high-quality epitaxial III-nitride films from their substrates. This method builds on a nanoepitaxial lateral overgrowth (NELO) process that provides III-Nitride films with low dislocation densities. NELO is accomplished using a nanoporous mask layer patterned on GaN substrates. Chemical removal of the SiO2 layer after growth of III-Nitride overlayers causes fracture at the interface between the GaN film and the original GaN substrate, resulting in free-standing GaN films with nanostructured surfaces on one side. These layers can be transferred to other substrates, and the nano-structured surface can be used in photonic devices, or planarized for power devices.
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