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Ni induced few-layer graphene growth at low temperature by pulsed laser deposition

Author(s): K. Wang | G. Tai | K. H. Wong | S. P. Lau | W. Guo

Journal: AIP Advances
ISSN 2158-3226

Volume: 1;
Issue: 2;
Start page: 022141;
Date: 2011;
Original page

We have used pulsed laser deposition to fabricate graphene on catalytic nickel thin film at reduced temperature of 650 °C. Non-destructive micro-Raman spectroscopic study on our samples, measuring 1x1 cm2 each, has revealed few-layer graphene formation. Bi-, tri-, and few-layer graphene growth has been verified by High Resolution Transmission Electron Microscopy. Our experimental results imply that the number of graphene layers formation relies on film thickness ratios of C to Ni, which can be well controlled by varying the laser ablation time. This simple and low temperature synthesizing method is excellent for graphene based nanotechnology research and device fabrication.
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