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Numerical Solution of Electronic Transport in Nanotransistors in Ballistic Regime for One and Two Dimensional System

Author(s): Ashrafosadat Ziaie | Faramarz Kanjouri‎ | Morteza Aslaninejad ‎

Journal: Majlesi Journal of Electrical Engineering
ISSN 2008-1413

Volume: 1;
Issue: 3;
Start page: 47;
Date: 2007;
Original page

Keywords: Nanoelectronic | Nanotransistor | Ballistic Nanotransistors | Nanomosfet.

For accessing to higher speed and more densities in packaging, FET structures have become small increasing from day to day. Devices as small as 18nm can still exhibit acceptable transistor characteristics but At such small sizes, the nature of carrier transport in the device begins to change. In such MOSFETs that the device size becomes smaller than the carrier scattering length, it is statistically very probable for carriers to traverse the channel from the source to drain electrodes without encountering a scattering event. Such transport is called ballistic transport technically. In this article, we have conducted a survey on the electron transport in nanotransistor and using the semi-classical approach based on Boltzmann Equations for ballistic regimes, the electrical currents for a two dimensional structure as well as a quantum wire have been calculated that this calculations are based on model that is indicated by A. Rahman, J. Guo, S. Datta.
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