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Ofstatistical and Fractal Properties of Semiconductor Surface Roughness

Author(s): Stanislav Jurecka | Maria Jureckova | Hikaru Kobayashi | Masao Takahashi | Mohammad Madani | Emil Pincik

Journal: Advances in Electrical and Electronic Engineering
ISSN 1336-1376

Volume: 7;
Issue: 1 - 2;
Start page: 377;
Date: 2008;
Original page

Keywords: Semiconductor surface | AFM | SiC.

Surface morphology evolution is of primary significance for the thin-film growth and modification of surface andinterface states. Surface and interface states substantially influence the electrical and optical properties of the semiconductorstructure. Statistical and fractal properties of semiconductor rough surfaces were determined by analysis of the AFM images.In this paper statistical characteristics of the AFM height function distribution, fractal dimension, lacunarity and granulometric density values are used for the surface morphology of the SiC samples description. The results can be used for solution ofthe microstructural and optical properties of given semiconductor structure.

Tango Jona
Tangokurs Rapperswil-Jona

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