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Ohmic contacts of microwave MESFET by cryogenic temperatures

Author(s): Ivashchuk А. V.

Journal: Tekhnika i Pribory SVCh
ISSN 2075-8391

Issue: 1;
Start page: 52;
Date: 2010;
Original page

Keywords: ohmic contact | FET | gallium arsenide | morphology | specific contact resistance | cooling

Conducted studies of the properties of ohmic contacts rс of microwave field-effect transistors with a Schottky barrier on gallium arsenide cooled to cryogenic temperatures. It is shown that a significant influence on the temperature dependence with a surface structure of the ohmic contacts, and for use in transistors operating at low temperatures, should be used only technology for forming a contact which provides fine-grain morphology and in which the contribution of thermal emission in the charge transport is negligible.
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