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On the mechanism of radiation-induced optical effects in vitreous As22S3-GeS2

Author(s): O.I. Shpotyuk | R.Ya. Golovchak | A.P. Kovalskiy | V. Pamukchieva | E. Skordeva | D. Arsova

Journal: Ukrainian Journal of Physical Optics
ISSN 1609-1833

Volume: 3;
Issue: 2;
Start page: 134;
Date: 2002;
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Keywords: optical transmittance | chalcogenide vitreous semiconductors | gamma-irradiation

A coordination defects formation model based on the concept of covalent chemical bond switching was developed for the microstructural explanation of ?-induced optical effects in As2S3-GeS2 chalcogenide glasses. The whole variety of possible destruction-polymerization transformations was considered separately for the “pure” vitreous v-As2S3 and v-GeS2, as well as for the mixed v-As2S3-GeS2 compositions. The topological schemes of the coordination defect formation were proposed, taking into account results obtained by the IR Fourier spectroscopy method of additional reflectivity in 400-200 cm-1 range.
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