Academic Journals Database
Disseminating quality controlled scientific knowledge

Optical characterisation of vertical-external-cavity surface-emitting lasers (VECSELs)

ADD TO MY LIST
 
Author(s): Anna Wojcik-Jedlinska | Kamil Pierscinski | Agata Jasik | Jan Muszalski | Maciej Bugajski

Journal: Optica Applicata
ISSN 0078-5466

Volume: 37;
Issue: 4;
Start page: 449;
Date: 2007;
VIEW PDF   PDF DOWNLOAD PDF   Download PDF Original page

Keywords: vertical-external-cavity surface-emitting laser (VECSEL) | DBR | quantum well | semiconductor laser | photoluminescence | reflectance

ABSTRACT
The purpose of this paper is to outline the principles of optical characterisation of the new kind of semiconductor devices: vertical-external-cavity surface-emitting lasers (VECSELs). Realisation of high efficiency semiconductor devices requires high accuracy of epitaxial process. Gain characteristic of VECSEL structure is strongly affected by the precise placing of the quantum wells within the multilayer structure. Detailed optical characterisation of particular parts of the structure allows growth errors to be identified and gives insight into the lasing behaviour. In this work, we present an approach taking advantage of two spectroscopic techniques, photoluminescence and reflectance measurements, to study properties of VECSEL structure based on InGaAs/GaAs active region, designed for emission wavelength at 980 nm.

Tango Rapperswil
Tango Rapperswil

     Affiliate Program