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Optical Constants for MBE n-Type GaAs Films Doped by Si or Te between 1.50-4.75 eV

Author(s): Svetlana N. Svitasheva

Journal: Journal of Electromagnetic Analysis and Applications
ISSN 1942-0730

Volume: 02;
Issue: 06;
Start page: 357;
Date: 2010;
Original page

Keywords: GaAs | Heterostructure | Optical Properties | Thin Films | Spectroscopic Ellipsometry

The thickness and spectral dependence of the complex refractive index of upper layer in thin-film MBE-grown GaAs heterostructures were calculated basing on an classical oscillatory model of dielectric function from spectra measured by spectroscopic ellipsometry (nondestructive, contactless optical method) in the range of 1.5-4.75 eV.
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