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Phase shifter 0-π on 4HSiC p–i–n-diodes

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Author(s): Boltovets N. S. | Krivutsa V. A. | Lychman K. A. | Zekentes K. | Orekhovsky V. A.

Journal: Tekhnika i Pribory SVCh
ISSN 2075-8391

Issue: 2;
Start page: 15;
Date: 2011;
Original page

Keywords: 4HSiC p-i-n-diode | capacity | breakdown voltage | phase shift | impedance | phase shifter 0-π

ABSTRACT
The paper presents the results of studying the parameters of the phase shifter with a phase shift from 0 to π on the basis of two microwave 4HSiC p–i–n-diodes. Diodes have a breakdown voltage of 500—700 V at 20 mA reverse current, the resistance of 2,5—3,0 ohms at forward current of 100 mA, capacity of 0,3 pF at reverse voltage of 40 V and switching time from direct current of 100 mA to reverse voltage 15 V 20 ns. In the frequency range of 2,4—2,6 GHz the phase shifter loss with a phase shift of 0° are 0,8—1,3 dB, and with a phase shift 175—179,5° are 1,7—2,5 dB.
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