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Preparation and Properties of Zinc Doped Cadmium Selenide Compounds by E-Beam Evaporation

Author(s): N.J. Suthan Kissinger | K. Perumal | J. Suthagar

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 3;
Issue: 3;
Start page: 05;
Date: 2011;
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Keywords: Cadmium Selenide | Zinc Selenide | Electron Beam | Evaporation | Optical Properties

Cd1 – xZnxSe films with different zinc content were deposited by electron beam evaporation technique onto glass substrates for the application of solid-state photovoltaic devices. The structural, surface morphological and optical properties of Cd1 – xZnxSe films have been studied in the present work. The host material,Cd1 – xZnxSe, have been prepared by the physical vapor deposition method of electron beam evaporation technique (PVD: EBE) under a pressure of 1 × 10 – 5 mbar. The X-ray diffractogram indicates that these alloy films are polycrystalline in nature, hexagonal structure with strong preferential orientation of the crystallites along (002) direction. Linear variation of lattice constant with composition (x) is observed. The optical properties shows that the band gap (Eg) values varies from 2.08 to 2.64 eV as zinc content varies from 0.2 to 0.8. The surface morphological studies show the very small, fine and hardly distinguishable grains smeared all over the surface. It is observed that the grain size is decreasing with increasing zinc content.

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