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Progress of High Frequency and High Output Power FET

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Author(s): LIU Jin-Long, LI Cheng-Ming, CHEN Liang-Xian, HEI Li-Fu, LV Fan-Xiu

Journal: Journal of Inorganic Materials
ISSN 1000-324X

Volume: 25;
Issue: 9;
Start page: 897;
Date: 2010;
Original page

Keywords: diamond film | high frequency | high output power | FET | review

ABSTRACT
Diamond films have been paid much attention in high frequency and high output power field, especially in field effect transistors (FET) with its outstanding electrical properties in the last two decades. For optimum electronics performance, quality of electronic films, good contacts and forming semiconductors are key techniques to make FETs. How to reduce gate length and various parasitic parameters and improve withstand voltage and heat-sinking capability determines whether FETs are of high-performance. The breakouts of key techniques, research progress and related hot spots of diamond films for high frequency and high output power FETs are reviewed. Mechanisms proposed to explain electrical conductivity of H-terminated diamonds are also presented.
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