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Properties of AlNx thin films prepared by DC reactive magnetron sputtering

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Author(s): Andrzej Stafiniak | Donata Muszynska | Adam Szyszka | Bogdan Paszkiewicz | Konrad Ptasinski | Sergiusz Patela | Regina Paszkiewicz | Marek Tlaczala

Journal: Optica Applicata
ISSN 0078-5466

Volume: 39;
Issue: 4;
Start page: 717;
Date: 2009;
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Keywords: aluminum nitride (AlN) | thin films | reactive magnetron sputtering | alternative dielectrics

ABSTRACT
In this paper, the results of investigation of the influence of cathode current on optical and dielectric AlNx thin-film properties are presented. AlNx films were prepared by pulsed DC reactive magnetron sputtering of Al target on substrates at room temperature. For characterization of fabricated test structures C-V spectroscopy, ellipsometry measurement and atomic force microscopy (AFM) were used.
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