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Redox-controlled memristive switching in the junctions employing Ti reactive electrodes

Author(s): Haitao Li | Yidong Xia | Hanni Xu | Lifei Liu | Xuefei Li | Zhenjie Tang | Xiangzhong Chen | Aidong Li | Jiang Yin | Zhiguo Liu

Journal: AIP Advances
ISSN 2158-3226

Volume: 1;
Issue: 3;
Start page: 032141;
Date: 2011;
Original page

We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS experiment, respectively. Due to the redox of the top electrode Ti and the consequent drift of oxygen vacancies, the device shows two distinct resistance states under a sweeping voltage loading. ON state is controlled by tunneling process, while OFF state is controlled by Schottky emission conductive mechanism. The failure behaviors of such memristive junctions are also discussed. In the light of the redox principle, we demonstrate that the devices could be recovered by loading a long electrical reduction treatment.
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