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Research of the Preparation Technology for the SiC Whisker

Author(s): CHEN Yang, WANG Cheng-Guo, GAO Ran-Ran, ZHU Bo

Journal: Journal of Inorganic Materials
ISSN 1000-324X

Volume: 28;
Issue: 7;
Start page: 757;
Date: 2013;
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Keywords: graphite materials; SiC whisker; crystallization fraction; orthogonal test method

SiC whiskers were prepared on graphite matrix using common and low-cost hydrogen silicone oil (H-PSO) as raw material, and the influence of different process parameters on the growth of SiC whisker was studied based on the crystallization fraction using orthogonal test method. The process parameters include heat treatment temperature (T), holding time (t), flow of protective atmosphere (f) and porosity of matrix (P). The morphology and structural characteristics of SiC whisker were also analyzed by SEM, TEM, RAMAN and XRD. The results show that the temperature is the most important factor that influences the growth of SiC whisker, followed by gas flow, porosity, holding time in proper sequence. The bigger gas flow in safe range makes generation reaction of SiC whisker sufficient, and smaller porosity benefits SiC crystal nucleus to grow up. Higher temperature and longer time are favorable to whisker continued growth. The SiC whisker is of core-shell structure with SiC phase as core and silicon oxide as the shell.

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