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Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing

Author(s): Ming-Yue Fu, Jen-Hwan Tsai, Cheng-Fu Yang and Chih-Hsiung Liao

Journal: Science and Technology of Advanced Materials
ISSN 1468-6996

Volume: 9;
Issue: 4;
Start page: 045001;
Date: 2008;
Original page

Keywords: rapid thermal annealing (RTA) | Si+ implantation | photoluminescence | SiO2 films

We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si+ ions. Room-temperature PL from 400-nm-thick SiO2 films implanted to a dose of 3×1016 cm−2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950–1150 °C) and duration (5–20 s). The reported approach of implanting silicon into SiO2 films followed by RTA may be effective for tuning Si-based photonic devices.
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