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SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black

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Author(s): Wang Feng-Lei | Zhang Li-Ying | Zhang Ya-Fei

Journal: Nanoscale Research Letters
ISSN 1931-7573

Volume: 4;
Issue: 2;
Start page: 153;
Date: 2008;
Original page

Keywords: Silicon carbide | Nanowires | Induction heating

ABSTRACT
Abstract SiC nanowires have been synthesized at 1,600 °C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half an hour. It was found that most of the nanowires have core-shell SiC/SiO2nanostructures. The nucleation, precipitation, and growth processes were discussed in terms of the oxide-assisted cluster-solid mechanism.

Tango Jona
Tangokurs Rapperswil-Jona

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