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SOI DEVICE SIMULATION OF AN AREA ‎EFFICIENT BODY CONTACT ‎

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Author(s): Arash Daghighi | ‎Mohamed A. Osman‎

Journal: Majlesi Journal of Electrical Engineering
ISSN 2008-1413

Volume: 1;
Issue: 1;
Start page: 63;
Date: 2007;
Original page

Keywords: Three-Dimensional Simulation - Floating Body Effects - On-resistance - Breakdown Voltage - ‎Isothermal Drift-Diffusion Model – Cutoff Frequency.‎

ABSTRACT
We have used three-dimensional simulation to investigate application of a new body contact to SOI devices. Performance characteristics of the new body contact on high-voltage SOI devices were studied. Our comparative investigation showed increased current drive, improved cutoff frequency, reduced on-resistance while attaining satisfactory breakdown voltage. The new body contact is applicable to both high and low voltage SOI MOSFETs.
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