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Sputtered of ZnO:Al thin Films for Application in Photovoltaic Solar Cells

Author(s): Sona Flickyngerova | Anna Rehakova | Vladimir Tvarozek | Ivan Novotny

Journal: Advances in Electrical and Electronic Engineering
ISSN 1336-1376

Volume: 7;
Issue: 1 - 2;
Start page: 382;
Date: 2008;
Original page

Keywords: Photovoltaic solar cells | ZnO:Al | transmittance.

High transparent and conductive, aluminium - doped zinc oxide thin films (ZnO:Al), were prepared by radio –frequency (RF) diode sputtering from ZnO+2 wt. % Al2O3 target on Eutal glass substrates. Surfaces of the samples weretreated by various technological steps during preparation. The ion bombardment and the substrate temperature modified theirstructure, surface morphology, electrical and optical parameters. In this work we present changes between samples preparedat room temperature (RT) and at 200°C, between samples on ion etched substrate and non-modified substrate, and effect ofion etching of the sample surface. We measured transmittance, resistivity and microroughness by AFM on all samples.
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