Academic Journals Database
Disseminating quality controlled scientific knowledge

Study on high signal-to-noise ratio (SNR) silicon p-n junction photodetector

Author(s): XianSong FU | SuYing YAO | JiangTao XU | Yao LU | YunGuang ZHENG

Journal: Optica Applicata
ISSN 0078-5466

Volume: 36;
Issue: 2-3;
Start page: 421;
Date: 2006;
VIEW PDF   PDF DOWNLOAD PDF   Download PDF Original page

Keywords: silicon p-n junction photodetector | antireflection layer | adjustment technique of spectrum band | spectral responsivity | high signal-to-noise ratio (SNR)

On the basis of n-type single-crystal (100) silicon substrate, a silicon p-n junction photodetector has been successfully developed. Three methods to improve photoresponse signal-to-noise ratio (SNR) were profoundly studied: the p-n junction depth was optimized to enhance the spectral responsivity within the wavelength range of 500–600 nm, an antireflection layer with the appropriate thickness was added to reduce the reflected light and enhance the sensitivity, the adjustment technique of spectral band response was adopted to remove the noise signal with normal silicon absorptive wavelengths. Eventually, the spectral responsivity SNR can be over 104 at 500–600 nm while the peak of spectral responsivity is 0.48 A/W at about 520 nm. After being optimized, silicon p-n junction photodetectors, which possess the properties of lower dark current, higher sensitivity, shorter response time and larger SNR, can be achieved.
Affiliate Program     

Tango Rapperswil
Tango Rapperswil