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Study on Phase Transition Property of Tungsten-doped Vanadium Dioxide Thin Film at Terahertz Range

Author(s): MAO Mao, HUANG Wan-Xia, ZHANG Ya-Xin, YAN Jia-Zhen, LUO Yi, SHI Qi-Wu, CAI Jing-Han

Journal: Journal of Inorganic Materials
ISSN 1000-324X

Volume: 27;
Issue: 8;
Start page: 891;
Date: 2012;
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Keywords: vanadium dioxide; infrared transmittance; terahertz; tungsten doped

Vanadium dioxide and tungsten-doped (W-doped) vanadium dioxide thin films deposited by aqueous Sol-Gel method were characterized with several different techniques (i.e. X-ray photoelectron spectroscope, atomic force microscope, X-ray diffraction), to determine their morphology and microstructure. Their metal-to-insulator (MIT) phase transition behavior in infrared spectral region (λ=4 μm) and terahertz (THz) spectral region (0.3–1.0 THz) were observed respectivele. The results demonstrate that the transmittance of W-doped VO2 film at room temperature is visibly lower than that of undoped VO2 film in both infrared and terahertz spectral region. The transition temperature of W-doped VO2 film is also lower than that of undoped VO2 film in the THz range. The MIT and structural phase transition (SPT) are observed during the phase transition of VO2 and W-doped VO2, and an obvious change of peak position occurs in W-doped VO2 film.

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