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SUB TEN MICRON CHANNEL DEVICES ACHIEVED BY VERTICAL ORGANIC THIN FILM TRANSISTOR

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Author(s): Abdul Rauf Khan | S.S.K. Iyer

Journal: International Journal of VLSI Design & Communication Systems
ISSN 0976-1527

Volume: 2;
Issue: 3;
Start page: 87;
Date: 2011;
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Keywords: Organic Thin Film Transistors OTFT | Radio Frequency Identification RFID | Poly-thiophene PT | Thin film transistor TFT.

ABSTRACT
The channel lengths of the top contact organic thin film transistors are usually defined during theirfabrication by optical lithography or by shadow masking during the metal deposition process. Realizingshort channel (sub-ten micron channel length) transistors by lithography will require costly lithographyequipment. On the other hand, it is extremely challenging to achieve short channel transistors using thelow cost shadow mask process. One low cost method of achieving short channel devices is to build verticaltransistors with the transistor, where the channel gets defined in the vertical part of the device.This paper shows that vertical channel top contact organic thin film transistor has been successfullyrealized on the vertical edge of trench. This helped in creating the device with channel lengths less than tenmicrons, much smaller than what could be typically achieved with the use of shadow masks.

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