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Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)

Author(s): Shikant Sahebrao Patil | Gajanan Niranjan Chaudhari | Vijay Ramkrishna Chinchamalatpure | Sunil Madhavrao Chore

Journal: Advances in Molecular Imaging
ISSN 2161-6728

Volume: 03;
Issue: 01;
Start page: 69;
Date: 2012;
Original page

Keywords: Sol-Gel Technique | ZrO2 Thin Film | C –V | I-V

The ZrO2 thin films deposited on Si (100) were successfully synthesized by solgel process and deposited by using spin-coating technique.The structural properties of ZrO2 thin films were investigated by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transform Infrared Spectroscopy (FT-IR), and electrical properties were studied by conventional techniques like Capacitance-Voltage (C-V) measurement and Current–Voltage (I–V) measurement. The XRD of ZrO2 films shows the films crystallized and exists in two phases at 700℃ calcinations temperature. The C–V characteristics of all the dielectric films that involved distinct inversion, depletion, and accumulation were clearly revealed in MIS structure. I-V characteristics of ZrO2 thin films on Si shows decreased saturation current on calcinations temperatures. The XPS measurement reveals that a zirconium silicate interfacial layer has formed in the ZrO2/Si Systems.
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Tango Rapperswil
Tango Rapperswil