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Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region

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Author(s): Damian Pucicki | Iwona Zborowska-Lindert | Beata Sciana | Damian Radziewicz | Boguslaw Boratynski

Journal: Optica Applicata
ISSN 0078-5466

Volume: 37;
Issue: 4;
Start page: 415;
Date: 2007;
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Keywords: p-i-n photodetector | diluted nitrides | (In | Ga)(As | N) | GaAs-based photodetectors | double quantum well (DQW) heterostructures

ABSTRACT
Double quantum well (DQW) (In, Ga)(As, N)/GaAs p-i-n photodetectors, grown by solid source molecular beam epitaxy using a radio-frequency plasma source for nitrogen with absorption for wavelengths above 870 nm have been investigated. The active region of the photodetectors contained two very thin absorption layers: 10.5 nm Ga(As, N) (structure #DP02) or 4 nm (In, Ga)(As, N) (#DP03). In spite of this, photodetectors exhibited high sensitivity (0.0525 A/W for 980 nm) for wavelength greater than the absorption edge of GaAs (870 nm). The dark current of photodetectors did not exceed 0.1 μA.

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Tangokurs Rapperswil-Jona

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