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Temperature Behavior of Exciton Absorption Bands in PbI2 Layer Crystals

Author(s): V. Kramar | N. Kramar | B. Nitsowich

Journal: Ukrainian Journal of Physical Optics
ISSN 1609-1833

Volume: 3;
Issue: 2;
Start page: 97;
Date: 2002;
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Keywords: layer crystal | lead iodide | exciton

The influence of bending waves on the warm-up behavior of exciton absorption bands in layer crystals has been investigated. The effective mass of the current carriers in the layer semiconductor PbJ2 has been computed and used to obtain the values of the exciton-phonon interaction function by pseudopotential method energy spectra calculations. It was shown that the different signs of the warm-up dynamics of an exciton absorption peak shift and existence of inversion points is related with the concurrent influence of two exciton energy relaxation mechanisms – on both the bending waves and the lattice phonons.
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