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Terahertz Wave Generation and Detection Analysis of Silicon Nanowire MOS Field-Effect Transistor

Author(s): Chen Yu | He Jin | Wang Yinglei | Lin Xinnan | Zhang Lining | Chan Mansun

Journal: IETE Technical Review
ISSN 0256-4602

Volume: 26;
Issue: 6;
Start page: 430;
Date: 2009;
Original page

Keywords: MOS field-effect transistor | Nanowire device | Plasma wave | THz wave generation and detection.

A complete analysis of Terahertz (THz) wave generation and detection of Silicon Nanowire MOS Field-Effect Transistor (SNFET) is presented in this paper. Based on the developed SNFET-THz device theory, the dependence of THz detection of SNFET on bias and structure parameters are obtained and illustrated. The numerical technique to solve fluid dynamic equation groups, which govern the THz wave transport in SNFET, is also introduced. Based on the developed numerical tool, the THz generation and its instability are demonstrated and analyzed in details. From developed numerical simulation program, the evolution processes of THz plasma wave in generation and detection modes are presented.
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