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TFET based Ternary Logic Gates & Arithmetic Circuits

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Author(s): Rashmi Deshpande | Pravin K. Dakhole | Sonali Dhobale

Journal: International Journal of Computer Applications
ISSN 0975-8887

Volume: ncipet;
Issue: 8;
Date: 2012;
Original page

Keywords: CMOS | ITRS | TFET | MVL

ABSTRACT
Scaling of conventional CMOS devices has reduced the device dimensions from 10 mm in 1970s to 0.1 ?m in a present day. According to ITRS (i.e. International Technology Roadmap for Semiconductors ) we are going to face the brick wall in 2015 if we continue in the same development speed. This will not be possible for us to maintain the pace forecasted by Moore.(Moore?s law) This is because of the fundamental limitations of device parameter dimensions due to which performance is degrading in several ways. To overcome this and go ahead in technology , one must look into new devices those can be scaled down to come up with other solutions. Either it should be possible to go ahead by again reducing the device dimensions in some way or we have to reduce the circuit overhead with less complexity. Solution to this might be : MVL i.e. Multivalued Logic & TFET i.e. Tunnel Field Effect Transistor.[1] This report presents a novel design of Ternary Logic Gates & arithmetic circuits using TFET.
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