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Thermal Behaviors of Chemical Vapor Deposited Bulk Si―C―N Ceramic

Author(s): LU Guo-Feng, QIAO Sheng-Ru, ZHANG Cheng-Yu, JIAO Geng-Sheng

Journal: Journal of Inorganic Materials
ISSN 1000-324X

Volume: 26;
Issue: 7;
Start page: 779;
Date: 2011;
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Keywords: amorphous; Si-C-N ceramic; thermal behavior; crystallization

The amorphous bulk Si―C―N ceramic was prepared by chemical vapor deposition (CVD). The thermal behaviors of as―prepared Si―C―N ceramic were investigated using TG/DSC, XRD, SEM and TEM. The phase separation firstly occurred in amorphous Si―C―N during the heat treatment, and one of separating phases appeared granular. β―SiC was formed in the granular separating phase. The amorphous Si―C―N began to crystallize at about 1200¡æ when the ceramic exposed to the heat treatment. The crystallization temperature was about 1372.6¡æ, which was determined by DSC under the condition of continuous heating at a heating rate of 20¡æ/min. β―SiC was found at 1200¡æ, while β―Si3N4 and α―SiC were formed at about 1500¡æ. A laminate―like structure appears in the heat―treated Si―C―N. This kind of structure was proved to be the highly crystallized Si―C―N.
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