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Thin Film Characterization Using Rotating Polarizer Analyzer Ellipsometer with a Speed Ratio 1:3

Author(s): Sofyan A. Taya | Taher M. El-Agez | Anas A. Alkanoo

Journal: Journal of Electromagnetic Analysis and Applications
ISSN 1942-0730

Volume: 03;
Issue: 09;
Start page: 351;
Date: 2011;
Original page

Keywords: Ellipsometry | Rotating Polarizer-Analyzer Ellipsometer | Thin Film Characterization | Optical Constants | C-Si | SiO2

In a recent previous work, we proposed a rotating polarizer-analyzer ellipsometer (RPAE) in which the two elements are rotating synchronously in the same direction with a speed ratio 1:3. We applied this technique to bulk samples. In this work, we present theoretically the characterization of 100 nm SiO2 thin film using this spectroscopic RPAE. We assume a structure consisting of air (ambient)/SiO2 (thin film)/c-Si (substrate). The ellipsometric parameters ψ and Δ are calculated when a clean signal is received by the detector and when a hypothetical noise is imposed on this signal. The film thickness and the optical constants of the film are calculated for the noisy signal in the spectrum range 200 - 800 nm. The results are compared with the proposed thickness and with the accepted values for SiO2 optical constants.
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