Academic Journals Database
Disseminating quality controlled scientific knowledge

Threshold voltage modeling in (100), (110) and (111) oriented nanoscale MOSFET substrates

ADD TO MY LIST
 
Author(s): Chaudhry Amit | Jatindra Nath Roy

Journal: Serbian Journal of Electrical Engineering
ISSN 1451-4869

Volume: 8;
Issue: 2;
Start page: 147;
Date: 2011;
VIEW PDF   PDF DOWNLOAD PDF   Download PDF Original page

Keywords: orientation | model | inversion quantization | MOS device | threshold voltage

ABSTRACT
An analytical model for the inversion layer quantization for nanoscale - Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with different crystallographic substrate orientations, such as (100), (110) and (111) has been developed. The threshold voltage analysis has been studied using the quantum inversion charge model under three substrate orientations. The results indicate a significant impact of crystal orientation on the threshold voltage and the inversion charge density. The results have also been compared with the numerically reported results and show good agreement.
Why do you need a reservation system?      Affiliate Program